ON Semiconductor has launched 25, 35, and 50 Ampere versions of its Transfer-Molded Power Integrated Modules (TM-PIM) for 1200V motor drive applications.
The NXH25C120L2C2, NXH35C120L2C2/2C2E and NXH50C120L2C2E are available in Converter-Inverter-Brake (CIB) and Converter-Inverter (CI) configurations. The modules consist of six 1200 V IGBTs, six 1600 V rectifiers, and an NTC thermistor for system level temperature monitoring; the CIB versions use an additional 1200 V IGBT coupled with a diode.
The molded power module family uses transfer-molded encapsulation, extending the cycling lifetime for both temperature and power. The modules measure 73 x 40 x 8 mm, have solderable pins, and have a standardized pin-out for CIB and CI versions.
The company also launched the NFAM2012L5B and NFAL5065L4B Intelligent Power Module (IPM) with voltage ratings of 650 V and 1200 V, and current ratings from 10 to 75 A. The 3-phase inverters – with integrated short circuit rated Trench IGBTs, fast recovery diode, gate driver, bootstrap circuits, optional NTC thermistor, and protection – provide compact, reliable modules with UL 1557 certification via an isolation rating of 2500 Vrms / minute. These IPMs feature direct bonding copper substrate and low loss silicon, enhancing power cycling lifetime and thermal dissipation.
With on-chip galvanic isolation, the NCD57000 and NCD57001 IGBT Gate Drivers enable compact, efficient, reliable gate driver designs by reducing system complexity. The devices deliver 4 / 6 A of source and sink current respectively, while also integrating DESAT, Miller clamp, UVLO, Enable, and regulated VREF.
The NCS21871 zero-drift operational amplifier provides precision signal conditioning with a low input offset voltage of 45 µV, and maintains that precision from -40°C to +125°C with low input offset drift of 0.4 µV/°C. These parameters make it ideal for low-side current sensing.