Toshiba Electronics Europe has launched a new discrete 1350V insulated gate bipolar Transistor (IGBT) for use in resonance-based home appliance applications that use induction heating, including microwave ovens and tabletop cookers.
The GT20N135SRA features a collector-emitter saturation voltage (VCE(sat)) of 1.60 V (typ.) and a diode forward voltage (VF) of 1.75 V, which represent reductions of around 10 per cent and 21 per cent respectively when compared with previous products. Both the IGBT and diode have improved conduction loss characteristics at 100 ºC to provide more efficient operation. Improved maximum junction-to-case thermal resistance (Rth(j-c)) of 0.48 ºC/W allows for easier thermal design with less heatsinking as it represents an approximate 26 per cent reduction.
The IGBT can suppress the short circuit current through a resonance capacitor that is generated when the device is started. The peak short circuit current is 129 A, almost a third lower than existing products and the Safe Operating Area (SOA) is widened, meaning that the IGBT is less likely to break down, thereby giving designers greater flexibility.
Housed in an industry standard TO-247 package, the device is able to handle a maximum collector current (IC) of 40 A, reducing with derating to 20 A at 100 ºC.
Shipments of the GT20N135SRA have started.
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