These IGBTs feature lower saturation voltage and faster switching: they employ a thinner wafer structure as well as field stop and proprietary trench gate technologies to meet the growing need for high frequency switching. Based on an advanced field stop structure, these 650V IGBTs offers a smaller carrier concentration gradient in the drift region leading to a better carrier distribution. This enables lower saturation voltage and faster switching, overcoming the trade-off between the saturation voltage and turn-off loss characteristics of conventional solutions.
Rohm has also used an advanced trench gate structure reducing gate charge and capacitance. An optimized doping and cell structure, combined with a 15% thinner wafer compared to the 2nd generation, significantly decreases the total loss of the device. During conductive phase, there is less carrier concentration resulting in lower switching losses during turn-off. These devices keep their soft switching behaviour even at a low external gate resistance. Measurement results show low noise performance even when employing higher switching speed. Saturation voltage is reduced by 6% and turn-off switching loss by 20% compared with the 2nd generation, overall allowing for enhanced system performance.
The 3rd Gen 650V IGBT line-up consists of 30/50/80A types in RGTV Series and 30/40/50A in RGW series, comes in two different packages – TO-247N and TO-3PFM – and two optimized series: The RGTV series is designed for applications demanding advanced short circuit safety, the RGW series is specially adapted for converters, offering low gate charge, capacitance and extremely low switching loss. Both are integrated with a very fast and soft recovery FRD for optimum efficiency.