4-A and 5-A two-output MOSFET drivers for telecom and server power supplies
Texas Instruments Incorporated is expanding the company’s MOSFET driver portfolio with three next-generation two-output gate drivers that improve efficiency and reliability in high-density isolated power supplies. The UCC27210 and UCC27211 are the industry’s first 120-V boot, high- and low-side, two-output MOSFET drivers to provide up to 4-A output current, while handling -10 volts of direct current (V DC ) immunity on the driver inputs.

The drivers support multiple high-frequency half-bridge and full-bridge power topologies with an extremely fast 18 ns propagation delay. The combined features improve efficiency and enhance reliability in telecom, server and industrial power supply designs with 100-V surge requirements.

The UCC27210 and UCC27211 devices feature industry’s first 120-V rated, 4-A high- and low-side drivers (TTL and pseudo-CMOS compatible input versions) that drive both N-channel high-side and low-side FETs.

The device’s 0.9 ohm pull-up and pull-down resistance minimizes switching loss as the MOSFET transitions through the Miller Plateau.

Increased system reliability of the devices includes inputs support -10 V of direct current and allows direct interface to gate-driver transformers without the need for rectification diodes.

TI has also introduced the industry’s fastest 5-A dual-channel low-side driver for secondary-side synchronous rectifier MOSFETs and IGBT power switches. The UCC27524 delivers low pulse distortion and high efficiency with a fast 12-ns propagation delay, 6-ns rise time with 1-ns output delay matching. The driver, which supports 4.5-V to 18-V operating voltages, has the flexibility to combine both outputs to drive up to 10-A applications, such as motor drive systems.

The UCC27210 and UCC27211 are available in an 8- or 10-pin, 4-mm x 4-mm 8-pin SON and an 8-pin SOIC package. The UCC27524 comes in industry-standard 8-pin SOIC and PDIP packages. A 3-mm x 3-mm, 8-pin WSON will be available later in the first quarter of 2012.   

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