The discrete TO-247 650V IGBT device follows the EconoDUAL and Easy packages, allowing a drop in replacement for existing parts and easier parallel designs.
The TRENCHSTOP IGBT7 technology comes in a TO-247 with 650 V break down voltage and current ratings of 20 A, 30 A, 40 A, 50 A, and 75 A. It can easily be used for replacing previous technologies and for paralleling. This version of IGBT7 is especially suited to applications such as industrial motor drives, power factor correction, photovoltaic, and uninterruptible power supplies.
New micro-pattern trench technology gives the TRENCHSTOP IGBT7 chip much lower static losses, allowing the smaller package to be used. For the same current class, the on-state voltage is reduced by ten percent. This reduces losses in industrial drives, which usually operate at moderate switching frequency. The IGBT T7 technology has a very low saturation voltage (V CE(sat)) and is co-packed with an emitter controlled 7 th generation (EC7) diode, which provides for a 150 mV lower forward voltage (V F) drop and improved reverse-recovery softness.
The device features superior controllability and excellent EMI performance. It can easily be adjusted to provide the application-specific best ratio of dv/dt and switching losses. The 650V TRENCHSTOP IGBT7 provides short circuit robustness as required in the applications. Additionally, it passed the JEDEC based HV-H3TRB (High Voltage High Humidity High Temperature Reverse Bias) test proving the ruggedness of the device in high humidity environments which can typically be found in industrial applications.
The discrete 650 V TRENCHSTOP IGBT7 can be ordered now.