The CoolSiC hybrid product family combines key benefits of the 650 V TRENCHSTOP 5 IGBT technology and the unipolar structure of co-packaged SiC Schottky barrier SiC diode.
The devices are especially suited for DC-DC power converters and power factor correction (PFC). These can typically be found in applications like battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power supplies (UPS), as well as server and telecom switched-mode-power supplies (SMPS).
The freewheeling SiC Schottky barrier diode co-packed with an IGBT significantly reduces switching losses at almost unchanged dv/dt and di/dt values. They offer up to 60 percent reduction of E on and 30 percent reduction of E off compared to a standard silicon diode solution, or the switching frequency can be increased at least by 40 percent with unchanged output power requirements. A higher switching frequency will allow reducing passive components size and thus lower bill-of-material cost.
The product family creates a bridge between pure silicon solutions and high performing SiC MOSFET designs. Even more, in comparison to pure silicon designs, Hybrid IGBTs can improve electromagnetic compatibility and system reliability. Because of the unipolar nature of Schottky barrier diodes, the diode can switch fast without severe oscillations and risk of a parasitic turn-on. Customers can choose between a TO-247-3 or a TO-247-4 pin Kelvin Emitter package. The fourth pin of the Kelvin Emitter package allows for an ultra-low inductance gate-emitter control loop and reduces the total switching losses.