II‐VI has launched a new grade of its proprietary reaction-bonded silicon carbide ceramic material with a record thermal conductivity of 255 W/(m-K) for power electronics applications, including IGBT baseplates.
The growing interest in clean energy is accelerating the electrification of the global energy and transport infrastructure and driving the demand for power electronics that can achieve greater efficiency and reliability. THe ceramic is based on a proprietary composition that achieves 255 W/(m-K) at 25°C, enabling power modules to dissipate heat efficiently.
The design of the material maintains other required characteristics of the materials, such as very high stiffness, lightweight, and a coefficient of thermal expansion that is extremely well matched to power electronics device substrates based on silicon or silicon carbide, ensuring excellent thermal contact.
“We believe that this is the best reaction-bonded silicon carbide ceramic commercially available on the market, with at least 25% greater thermal conductivity than any competing product, demonstrating our differentiated core competency in engineered materials innovation,” said Steve Rummel, Sr. Vice President, Engineered Materials and Laser Optics Business Unit. “We are now planning to equip a new state-of-the-art facility in Vietnam, adding to our three existing production facilities in the U.S., to expand the scale of our manufacturing capacity and market reach of our world-class engineered ceramics and metal-matrix composites, and to provide our customers with supply chain continuity in order to meet the anticipated demand.”