DC/DC converters provide drive for next-gen SiC MOSFETs
Recom (Gmunden, Austria) has added a 2W DC/DC converter with output characteristics optimised for providing gate drive to silicon carbide power FETs.

High-frequency and high-voltage switching are the main challenges of driving SiC MOSFETs. Extreme voltage potentials between the control and power side can wear down isolation barriers and lead to failures: switching SiC MOSFETs requires unique turn-on and turn-off voltages atypical of other IGBT or MOSFET applications.

 

The RxxP21503D series provides asymmetrical output voltages of +15 and -3V, which are needed to efficiently switch second generation SiC MOSFETs. A typical DC/DC isolation voltage should normally be at least twice the working voltage, but the high ambient temperature and fast switching edges generated by these high-power transistors cause additional stress to the insulation barrier. Recom therefore specifies 6.4kVDC isolation for this device series to ensure that the isolation barrier stands up to even the harshest tests. The internal transformer uses a pot-core to physically separate the input and output windings, yet the converter still fits into an industry standard SIP7 case. These converters are available with input voltages of 12V, 15V or 24V and are specified with parasitic capacitance <10 pF. They are EN-60950-1 certified and fully compliant to RoHS2 and REACH.

 

Recom Power;