Dynex has a pedigree that goes back to the start of the manufacture of semiconductors in Lincoln by Associated Electrical Industries Ltd. (AEI) in 1956 and continued as Marconi Electronic Devices Ltd. (MEDL). Dynex has designed and manufactured IGBT and bipolar die and wafers there for many years.
The company has now begun offering foundry services to external semiconductor module companies focusing on IGBT die with a breakdown voltage of 1.2kV to 6.5kV and has received its first production order. This has come from a “major international semiconductor device manufacturer,” Dynex said.
Dynex is offering to the market the Trench Gate and DMOS manufacturing capabilities that form the basis of its own IGBT modules. The company is also offering an in-house design team to tailor chips to specific customer requirements.
“In 2017, we released new, market-leading, high power IGBT modules – including those incorporating the latest-generation Trench Gate technology – as well as the pioneering Press-pack IGBT,” said Clive Vacher, CEO of Dynex Semiconductor Ltd. “At the same time, we have refined our wafer fabrication processes to achieve benchmark levels of quality, reliability and yields. We are pleased now to be offering this technology and process robustness to the wider semiconductor market.”
Dynex Semiconductor Ltd. is the only operating business of Ottawa-based Dynex Power Inc. which in turn is majority owned by Zhuzhou CRRC Times Electric Co. Ltd. of Hunan province in China.