BSM100GB120DLC
Product Category: IGBT Modules BSM100GB120DLC 
Manufacturer: Infineon
RoHS: No
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 200 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 780 W
Package / Case: 62 mm
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 30.5 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 61.4 mm
 

IGBT Modules 1200V 100A DUAL