BSM50GP60
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.2 V
Continuous Collector Current at 25 C: 70 A
Gate-Emitter Leakage Current: 300 nA
Pd – Power Dissipation: 250 W
Package / Case: EconoPIM2
Maximum Operating Temperature: + 125 C
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10

IGBT: 50A600V;IGBT Modules 600V 50A PIM