Infineon Technologies has added a new package technology to its EiceDRIVER 1EDN TDI (truly differential inputs) 1-channel gate driver family that is 20 per cent the size of previous devices, increasing the power density.
The 1EDN7550U is housed in a 1.5 mm x 1.1 mm x 0.39 mm 6-pin leadless TSNP (Thin Small Non-leaded Package) for high power-density and high efficiency designs at a lower system cost compared to alternative solutions. The TSNP flip chip package has been used for power regulators, antenna and 3D chips.
Each time a power MOSFET is being turned on or off in a SMPS, parasitic inductances produce ground-shifts that may cause false triggering of the gate driver. The TDI design eliminates this ground bounce to improve the reliability of a power design. The combination of tiny size and ground-shift robustness enables two of these gate-driver ICs to operate in a 48 V half-bridge configuration. This gives designers freedom to place the gate driver ICs in the PCB layout wherever they fit best which is key to enabling industry leading power density.
The TSNP package for the 1EDN7550U occupies a PCB-area five times smaller compared to its SOT-23 family members. With a 3.3 V PWM input signal at application level, the EiceDRIVER 1EDN TDI can withstand static ground-shifts of up to ± 70 V and transient ground shifts of as much as ± 150 V peak.
Next: gate driver power density
The EiceDRIVER 1EDN7550U, in leadless TSNP package, enables 25 V and 40 V OptiMOS MOSFETs to operate in switched capacitor topologies at 1.2 MHz switching frequency. In such an application, a high power density of 3060 W/in3 and a 97.1 per cent peak efficiency (including auxiliary losses) have proven to be possible.
The EiceDRIVER 1EDN TDI family is available in a standard SOT-23 6-pin package and from now onwards also in the 6-pin TSNP package.