IGBT and SiC gate drivers certified for automotive use
Power Integrations has certified two members of its SCALE-iDriver gate driver family to AEC-Q100 Grade Level 1 for automotive use.

The SID1132KQ and SID1182KQ are suitable for driving 650 V, 750 V and 1200 V automotive IGBT and SiC-MOSFET modules, and are rated for peak currents of +/-2.5 A and +/-8 A respectively. The SID1182KQ has the highest output current of any isolated gate driver available and is capable of driving a 600 A /1200 V and 820 A /750 V switch.

The SCALE-iDriver family of single-channel IGBT and SiC-MOSFET drivers uses Power Integrations’ FluxLinkmagneto-inductive bi-directional communication technology which ensures reinforced galvanic isolation between the primary and secondary sides. FluxLink eliminates the need for opto-electronics, which suffer parametric changes with age and thermal degradation that limits operational lifetime. Magnetically-coupled conductors are integrated into the thermoplastic of the eSOP package which offers a CTI level of 600, 9.5 mm creepage and clearance distance, and easily meets automotive 5500m requirements.