BSM50GB120DN2
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 78 A
Gate-Emitter Leakage Current: 200 nA
Pd – Power Dissipation: 400 W
Package / Case: Half Bridge1
Maximum Operating Temperature: + 150 C
Packaging: Bulk
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
 

50A/1200V/IGBT/2U;IGBT Modules 1200V 50A DUAL