Lineup expansion of small MOSFETs for automotive equipment that help reduce power consumption with low On-resistance

Product News 2021-09

Lineup expansion of small MOSFETs for automotive equipment that help reduce power consumption with low On-resistance

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched 30 V product “SSM6K818R”, N-channel MOSFETs for automotive equipment suitable for headlight control switches and so forth to expand its lineup. 

The new product feature industry-leading[1] low On-resistance with our new process. And they have expanded the chip mounting capability with their flat-lead packages, reducing their thermal resistance. Accordingly , the products feature a power dissipation rating of 1.5 W with the small TSOP6F package, helping reduce the power consumption of equipment. In addition, the TSOP6F package has reduced the mounting area by about 70% compared to the SOP-8 package with a similar power dissipation rating, helping reduce the size of equipment. Furthermore, they conform to AEC-Q101, allowing them to be used for various purposes including automotive applications such as headlight control switches, light control switches, and load switches for USB power delivery.

And another 40 V product SSM6K804R[2] will be in mass production.

Notes :
[1] Comparison with the product of the TSOP6F class package and the same maximum rating, according to a survey by Toshiba (as of July 2021)
[2] Mass production will be started in plan October, 2021 (as of September 2021)

 

Applications

  • Automotive equipment (headlight, turn lamp, daytime running light, USB charger, etc.)

Features

  • Reducing power consumption with industry-leading[1] low On-resistance :
    RDS(ON)=12 mΩ (max) at VGS=4.5 V (SSM6K818R)
  • By reducing thermal resistance, featuring a power dissipation rating of 1.5 W with the TSOP6F package
  • AEC-Q101 qualified

Main Specifications

(@Ta=25 °C)

Part

number

Polarity

Package

Absolute maximum ratings

Electrical characteristics

Name

Size

typ.

(mm)

Drain-

source

voltage

VDSS

(V)

Gate-

source voltage

VGSS

(V)

Drain

current

(DC)

ID

(A)

Power

dissipation

PD

(W)

Drain-source

On-resistance

RDS(ON)

max

(mΩ)

Input

capacitance

Ciss

typ.

(pF)

Total

gate

charge

Qg

typ.

(nC)

at VGS=

4.5 V

SSM6K818R

N-channel

TSOP6F

2.9×2.8

×0.8

30

±20

15

1.5

12

1130

7.5

SSM6K804R[2]

40

±20

12

1.5

18

1110

7.5

SSM6K809R[3]

60

±20

6

1.5

51

550

9.3

SSM6K810R[3]

100

±20

3.5

1.5

92

430

3.2

SSM6K819R[3]

100

±20

10

1.5

36.4

1110

8.5

Notes:

[3] Existing products

Internal Circuit

Lineup expansion of small MOSFETs for automotive equipment that help reduce power consumption with low On-resistance

Application Circuit Examples

Lineup expansion of small MOSFETs for automotive equipment that help reduce power consumption with low On-resistance

Note :

The application circuits shown in this document are provided for reference purposes only.

Thorough evaluation is required, especially at the mass-production design stage.

Providing these application circuit examples does not grant any license for industrial property rights.