The process supports 8 to 16V isolated high voltage devices that are implemented on SOI substrates for applications that include audio amps, DC-DC converters, and power management ICs for the mobile and consumer markets. At the same time the process supports 3.3V and 5.0V CMOS digital logic and mixed-signal and analog devices.
Integrating CMOS and high voltage devices on SOI substrates with deep trench isolation (DTI) offers minimum device area, minimum substrate leakage, improved radiation hardness and good high-temperature operation, MagnaChip said in a statement. This enables the design of PMICs with unipolar or bipolar supplies with latch-up free operation.
“We intend to expand our SOI based BCD portfolio with additional voltage ratings to continue to support the growing applications that can benefit from the isolation feature of this process,” said Namkyu Park, senior vice president of marketing for MagnaChip’s manufacturing services division.