Next generation SiC MOSFETs and diodes for industrial and automotive markets
Microsemi is sampling the first products in its next-generation 1200V Silicon Carbide (SiC) MOSFETs and complementary 1200V SiC Schottky barrier diodes (SBDs),

The 40 mOhm MSC040SMA120B MOSFET is highly avalanche-rated for industrial, automotive and commercial aviation power applications, and offers a high short circuit withstand rating for robust operation. Additional members of the product family will be released in the coming months, including commercially and AEC-Q101 qualified 700 V and 1200 V SiC MOSFET solutions to address a wide range of power applications which can leverage Microsemi’s newly released SiC SBDs.

“Our new SiC MOSFET product family provides customers with the benefits of more efficient switching and high reliability, particularly in comparison to Silicon diodes, Silicon MOSFETs and Insulated Gate Bipolar Transistor (IGBT) solutions,” said Leon Gross, vice president and business unit manager for Microsemi’s Power Discretes and Modules business unit. “Customers focused on developing cost-effective power electronics solutions for rugged environments can select their ideal solutions from these next-generation offerings, with the ability to scale to their specific SiC MOSFET needs.”

The SiC MOSFETs and SiC SBDs are designed with high repetitive unclamped inductive switching (UIS) capability at rated current, with no degradation or failures, a high UIS capability at approximately 10-15 Joule per square centimeter (J/cm 2) and robust short circuit protection at 3-5 microseconds . The SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss and can be paired withthe MOSFETs for use in modules.