NIEC PRHMB150B12A New Stock

NIEC   PRHMB150B12A  New Stock
#PRHMB150B12A NIEC PRHMB150B12A New PRHMB150B12A Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; PRHMB150B12A , PRHMB150B12A pictures, PRHMB150B12A price, #PRHMB150B12A supplier

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Manufacturer Part Number: PRHMB150B12A
Part Life Cycle Code: Active
Ihs Manufacturer: KYOCERA CORP
Package Description: FLANGE MOUNT, R-XUFM-X5
Manufacturer: KYOCERA Corporation
Risk Rank: 5.16
Case Connection: ISOLATED
Collector Current-Max (IC): 150 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X5
Number of Elements: 1
Number of Terminals: 5
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 730 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: POWER CONTROL
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 800 ns
Turn-on Time-Nom (ton): 400 ns
VCEsat-Max: 2.4 V
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-5