High efficiency, single-channel gate drivers for silicon carbide SiC MOSFETs from Power Integrations are now qualified to AEC-Q100 for automotive use.
The SIC118xKQ SCALE-iDrivers family can be configured to support gate-drive voltage requirements of commonly used SiC MOSFETs alongside additional safety and protection features.
The SIC1182KQ (1200 V) and SIC1181KQ (750 V) SCALE-iDriver devices are optimized for driving SiC MOSFETs in automotive applications, exhibiting rail-to-rail output, fast gate switching speed, unipolar supply voltage supporting positive and negative output voltages, integrated power and voltage management and reinforced isolation.
Pairing the SCALE-iDriver control and safety features with high-speed FluxLink communication technology improves isolation capability, and enables safe, cost-effective designs for inverters with very few external components up to 300 kW.
“Silicon carbide MOSFET technology opens the door for smaller, lighter automotive inverter systems. Switching speeds and operating frequencies are increasing; our low gate resistor values maintain switching efficiency, while our fast short circuit response quickly protects the system in the event of a fault,” said Michael Hornkamp, senior director of marketing for automotive gate-driver products at Power Integrations.
“Furthermore, SCALE-iDriver sets a new standard in isolation robustness for functional safety; even if a power device causes catastrophic driver failure, SCALE-iDriver’s isolation remains intact ensuring that no part of the chassis will carry life-threatening high voltages,” he said.
The SCALE-iDriver devices have a high immunity to external magnetic fields and are available in a compact eSOP package that provides ≥9.5 mm of creepage and clearance, using material that has the highest CTI level (CTI =600 per IEC 60112). They are available now, priced at $5.39 in 10,000 piece quantities.