The proven 62 mm SiC module has been designed in half-bridge topology and is based on the trench chip technology. It opens up silicon carbide for applications in the medium power range starting at 250 kW, the point where silicon reaches the limits of power density with IGBT technology. Compared to a 62 mm IGBT module, the CoolSiC module can be used in applicaitons from solar, server, energy storage, EV charger and traction to power conversion systems.
The 62 mm module uses Infineon’s CoolSiC MOSFETs which enable a high current density and high frequency switching. The low switching and conducting losses reduce the need for colling while the high switching frequency allows the use of smaller magnetic components. This leads to smaller inverter designs for the application in terms of size, overall system costs can be reduced.
The module uses a base plate and screw connections to provide a robust mechanical design for high system availability, a minimum of service cost and off-time losses. The reliability is made possible by high thermal cycling capability and a continuous operating temperature (T vjop) of 150°C. The symmetrical internal design of the housing allows identical switching conditions for the upper and lower switch. As an option, the thermal performance of the module can be improved even further with pre-applied thermal interface Material (TIM).
The CoolSiC MOSFETs 1200 V in the 62 mm package come in variants of 6 mΩ/250 A, 3 mΩ/357 A, and 2 mΩ/500 A respectively. The modules are designed for fast characterization with double pulse/continuous operation and an evaluation board is available for the devices. For ease of use, it offers a flexible adjustment of the gate voltage and gate resistors. At the same time, it can serve as a reference design for driver boards for series production.