Three-phase IGBT, MOSFET gate drivers carry 1.2 kV ratings December 2, 2020 By Redding TraigerInfineon Technologies AG broadens its level-shift EiceDRIVER portfolio with a 1200 V three-phase gate driver. It is based on the company’s unique silicon-on-insulator (SOI) technology. The device provides leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. These unique features reduce BOM and enable a more robust design with a compact form factor suitable for industrial drives and embedded inverter applications.

The level-shift gate driver 6ED2230 provides 350 mA / 650 mA source and sink drive capability. It prevents shoot-through thanks to the integrated dead time. The integrated over-current protection comparator with a +/-5 percent reference threshold accuracy provides fast, repeatable, and reliable switch protection. The integrated bootstrap diodes offer ultra-fast reverse recovery with a very low typical resistance of 40 Ω.

Negative VS transient voltage immunity of -100 V with repeating 700 ns wide pulses supports superior robustness and reliable operation. The low and high side voltage supplies feature independent under-voltage lockout (UVLO) for safe operation. A unique DSO-24 footprint separates the low and high voltage on opposite sides of the package to further increase clearance and creepage.

The EiceDRIVER 6ED2230 can be ordered now in a DSO-24 300 mil package (industry-standard DSO-28 package dimensions) with a unique footprint. This package has a reduced pin-count leading to a superior 2 kV ESD rating according to the human-body model (HBM).