Toshiba MG100J6ES50 Toshiba MG100J6ES50 Toshiba MG100J6ES50 Toshiba MG100J6ES50 Toshiba MG100J6ES50

#MG100J6ES50 Toshiba MG100J6ES50 New IGBT: 100A600V; Toshiba GTR module Silicon N Channel IGBT. MG100J6ES50. High Power Switching Applications. Motor Control, MG100J6ES50 pictures, MG100J6ES50 price, #MG100J6ES50 supplier
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High Power Switching Applications
Motor Control Applications
The electrodes are isolated from case.
High input impedance.
6 IGBTs built into 1 package.
Enhancement-mode.
High speed : tf = 0.30µs (Max) (IC = 100A)
 trr = 0.15µs (Max) (IF = 100A)
Low saturation voltage
 : VCE (sat) = 2.70V (Max) (IC = 100A) 

IGBT: 100A600V; TOSHIBA GTR Module Silicon N Channel IGBT. MG100J6ES50. High Power Switching Applications. Motor Control