The XT018 platform can support up an operating voltage of up to 200V and an operating temperature up to 175°C. It includes 40V and 60V transistors within the XT018 bulk CMOS process and is described as being 30 percent lower cost than competitive SOI processes. X-Fab states the process is suitable for such automotive applications as monolithic motor controllers and physical layer transceivers including integrated or stand-alone LIN/CAN transceivers.
The XT018 process offers deep trench isolation (DTI) plus those of six-metal-layer 180nm bulk CMOS process. The combination of SOI and DTI allow isolated diodes and reverse supply voltage protection that is difficult to achieve with bulk CMOS or BCD technologies.
PDK support for the XT018 foundry platform is available including device characterization and modelling and a library of analog, digital and memory IP. Depletion transistors, Zener diodes, high performance BJTs and a 200V IGBT device also are ready to be used, said X-Fab.